MS2475 applications equivalent, rf & microwave transistors avionics applications.
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* DESIGNED FOR HIGH POWER PULSED IFF 720 WATTS (min.) IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.8 dB MIN. GAIN LOW THER.
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* DESIGNED FOR HIGH POWER PULSED IFF 720 WATTS (min.) IFF 1030 or 1090.
The MS2475 is a silicon NPN power transistor designed for IFF applications. The MS2475 is designed to exceed the high peak power requirements of today's IFF systems. Hermetic sealing, gold metalization and internal input matching provide superior lo.
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