MSC035SMA070B
MSC035SMA070B is N-Channel Power MOSFET manufactured by Microsemi.
Overview
The silicon carbide (Si C) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC035SMA070B device is a 700 V, 35 mΩ Si C MOSFET in a TO-247 package.
Features
The following are key features of the MSC035SMA070B device:
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 175 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- Ro HS pliant
Benefits
The following are benefits of the MSC035SMA070B device:
- High efficiency to enable lighter, more pact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need for external freewheeling diode
- Lower system cost of ownership
Applications
The MSC035SMA070B device is designed for the following applications:
- PV inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution
050-7745 MSC035SMA070B Datasheet Revision C
Device Specifications
Device Specifications
This section shows the specifications of the MSC035SMA070B device.
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MSC035SMA070B device. Table 1
- Absolute Maximum Ratings
Symbol
Characteristic
Ratings
Unit
VDSS
Drain source voltage
Continuous drain current at TC = 25...
