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MSC2X101SDA120J - Dual Silicon Carbide Schottky Barrier Diode

Key Features

  • The following are key features of the MSC2X101SDA120J and MSC2X100SDA120J devices:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant.
  • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X101SDA120J and MSC2X100SDA120J devices:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.

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Other Datasheets by Microsemi (Microchip)

Part Number Description
MSC2X101SDA070J Dual Silicon Carbide Schottky Barrier Diodes
MSC2X100SDA070J Dual Silicon Carbide Schottky Barrier Diodes
MSC2X100SDA120J Dual Silicon Carbide Schottky Barrier Diode
MSC2X30SDA070J Dual Silicon Carbide Schottky Barrier Diodes
MSC2X30SDA120J Dual Silicon Carbide Schottky Barrier Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC2X101/100SDA120J Dual Silicon Carbide Schottky Barrier Diode Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X101/100SDA120J are dual 1200 V, 100 A SiC SBD devices in a SOT-227 package.