Datasheet Summary
MSC2X51/50SDA120J Dual Silicon Carbide Schottky Barrier Diodes
Product Overview
The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51/50SDA120J are dual 1200 V, 50 A SiC SBD devices in a SOT-227 package.
Figure 1
- Parallel MSC2X51SDA120J
Figure 2
- Anti-parallel MSC2X50SDA120J
Features
The following are key Features of the MSC2X51SDA120J and MSC2X50SDA120J devices:
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- RoHS pliant
- Isolated voltage to 2500 V
Benefits
The...