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MX086-4 Datasheet, Diode, Microsemi

MX086-4 Datasheet, Diode, Microsemi

MX086-4

datasheet Download (Size : 49.82KB)

MX086-4 Datasheet
MX086-4

datasheet Download (Size : 49.82KB)

MX086-4 Datasheet

MX086-4 Features and benefits

MX086-4 Features and benefits


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* Standard spacecraft screening is per Microsemi PS11.50 “S” (no suffix letter required, MX086-4 is only “S” screened) Designed for battery ce.

MX086-4 Description

MX086-4 Description

Peak Repetitive Reverse Voltage (NOT A BLOCKING DIODE!) Average Rectified Forward Current, Tc≤ 125°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Junction Temperature Range (for bypass operation) Storage Temperature Range Thermal Resis.

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MX086-4 Page 1

TAGS

MX086-4
Battery
Bypass
Charge
Diode
Microsemi

Manufacturer


Microsemi (https://www.microsemi.com/)

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