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  Microsemi Electronic Components Datasheet  

SMAJ90Ae3 Datasheet

400W Transient Voltage Suppressor protection device

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SMAJ5.0e3 to SMAJ440CAe3
400W Transient Voltage Suppressor (TVS) protection device
Main product characteristics
VWM
VBR(min) - VBR(max)
IPP
VCL(MAX)
PPP
5.0V – 440V
6.40V – 543V
41.7A – 0.6A
9.6V – 713V
400W
RoHS
COMPLIANT
DO-214AC (SMA)
Description and applications
This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or
radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response
time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from
ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can
also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class
levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands
and special applications.
RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)
Qualified to automotive grade – AEC Q101
Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.
Maximum ratings and characteristics(1)
Symbol
PPPM
IPPM
PM(AV)
IFSM
VF
RΘJL
RΘJA
TSTG
TJ
Parameter
Peak power dissipation with a 10/1000µs waveform (2)(3) (fig.1)
Peak pulse current with a 10/1000µs waveform (2) (fig. 3)
Steady state
(9.5mm) (3)
power
dissipation
at
TL
=
75ºC,
lead
lengths
0.375”
Non repetitive peak forward surge current
(8.3ms single half sine wave) unidirectional only (4)
Maximum instantaneous forward voltage at 25A for unidirectional
only (5)
Typical thermal resistance junction to lead
Typical thermal resistance junction to ambient
Storage temperature
Junction temperature
(1) All ratings at 25ºC unless specified otherwise
(2) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25ºC per Fig. 2. rating is 300W above 78V.
(3) Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm)
(4) Mounted on minimum recommended pad layout
(5) VF=3.5V for devices of VBR < 220V and VF=5.0V maximum for devices of VBR > 220V
Value
400
See next table
1.0
40
3.5 / 5.0
30
120
-55 to +150
-55 to +150
Unit
W
A
W
A
V
ºC/W
ºC/W
ºC
ºC
Copyright © 2010
Mar Rev C
www.Microsemi.com
1/6


  Microsemi Electronic Components Datasheet  

SMAJ90Ae3 Datasheet

400W Transient Voltage Suppressor protection device

No Preview Available !

SMAJ5.0e3 to SMAJ440CAe3
400W Transient Voltage Suppressor (TVS) protection device
Electrical characteristics(1)
DEVICE
Device
marking code
UNI BI
BREAKDOWN
VOLTAGE (2), VBR
TEST
VBR (V) @ IT (mA) CURRENT
(mA)
IT
STAND-OFF
VOLTAGE VWM
(V)
MAXIMUM MAXIMUM PEAK MAXIMUM
STANDBY
PULSE
CLAMPING
CURRENT (4) ID CURRENT (3) IPP VOLTAGE VC (V)
(µA) @ VWM
(A)
@ IPP
Min Max
SMAJ5.0e3 / SMAJ5.0Ce3
MAD MWD 6.40 7.82
10
5.0 800 41.7
9.6
SMAJ5.0Ae3 / SMAJ5.0CAe3 (5)
MAE MWE 6.40 7.07
10
5.0 800 43.5
9.2
SMAJ6.0e3 / SMAJ6.0Ce3
MAF MWF 6.67 8.15
10
6.0 800 35.1 11.4
SMAJ6.0Ae3 / SMAJ6.0CAe3
MAG MWG 6.67 7.37
10
6.0 800 38.8 10.3
SMAJ6.5e3 / SMAJ6.5Ce3
MAH MWH 7.22 8.82
10
6.5 500 32.5 12.3
SMAJ6.5Ae3 / SMAJ6.5CAe3
MAK MWK 7.22 7.98
10
6.5 500 35.7 11.2
SMAJ7.0e3 / SMAJ7.0Ce3
MAL MWL 7.78 9.51
10
7.0 200 30.1 13.3
SMAJ7.0Ae3 / SMAJ7.0CAe3
MAM MWM 7.78 8.60
10
7.0 200 33.3 12.0
SMAJ7.5e3 / SMAJ7.5Ce3
MAN MWN 8.33 10.2
1.0
7.5
100 28.0
14.3
SMAJ7.5Ae3 / SMAJ7.5CAe3
MAP MWP 8.33 9.21
1.0
7.5
100 31.0
12.9
SMAJ8.0e3 / SMAJ8.0Ce3
MAQ MWQ 8.89 10.9
1.0
8.0
50 26.7 15.0
SMAJ8.0Ae3 / SMAJ8.0CAe3
MAR MWR 8.89 9.83
1.0
8.0
50 29.4 13.6
SMAJ8.5e3 / SMAJ8.5Ce3
MAS MWS 9.44 11.5
1.0
8.5
10 25.2 15.9
SMAJ8.5Ae3 / SMAJ8.5CAe3
MAT MWT 9.44 10.4
1.0
8.5
10 27.8 14.4
SMAJ9.0e3 / SMAJ9.0Ce3
MAU MWU 10.0 12.2
1.0
9.0
5.0 23.7
16.9
SMAJ9.0Ae3 / SMAJ9.0CAe3
MAV MWV 10.0 11.1
1.0
9.0
5.0 26.0
15.4
SMAJ10e3 / SMAJ10Ce3
MAW MWW 11.1 13.6
1.0
10
1.0 21.3 18.8
SMAJ10Ae3 / SMAJ10CAe3
MAX MWX 11.1 12.3
1.0
10
1.0 23.5 17.0
SMAJ11e3 / SMAJ11Ce3
MAY MWY 12.2 14.9
1.0
11
1.0 19.9 20.1
SMAJ11Ae3 / SMAJ11CAe3
MAZ MWZ 12.2 13.5
1.0
11
1.0 22.0 18.2
SMAJ12e3 / SMAJ12Ce3
MBD MXD 13.3 16.3
1.0
12
1.0 18.2 22.0
SMAJ12Ae3 / SMAJ12CAe3
MBE MXE 13.3 14.7
1.0
12
1.0 20.1 19.9
SMAJ13e3 / SMAJ13Ce3
MBF MXF 14.4 17.6
1.0
13
1.0 16.8 23.8
SMAJ13Ae3 / SMAJ13CAe3
MBG MXG 14.4 15.9
1.0
13
1.0 18.6 21.5
SMAJ14e3 / SMAJ14Ce3
MBH MXH 15.6 19.1
1.0
14
1.0 15.5 25.8
SMAJ14Ae3 / SMAJ14CAe3
MBK MXK 15.6 17.2
1.0
14
1.0 17.2 23.2
SMAJ15e3 / SMAJ15Ce3
MBL MXL 16.7 20.4
1.0
15
1.0 14.9 26.9
SMAJ15Ae3 / SMAJ15CAe3
MBM MXM 16.7 18.5
1.0
15
1.0 16.4 24.4
SMAJ16e3 / SMAJ16Ce3
MBN MXN 17.8 21.8
1.0
16
1.0 13.9 28.8
SMAJ16Ae3 / SMAJ16CAe3
MBP MXP 17.8 19.7
1.0
16
1.0 15.4 26.0
SMAJ17e3 / SMAJ17Ce3
MBQ MXQ 18.9 23.1
1.0
17
1.0 13.1 30.5
SMAJ17Ae3 / SMAJ17CAe3
MBR MXR 18.9 20.9
1.0
17
1.0 14.5 27.6
SMAJ18e3 / SMAJ18Ce3
MBS MXS 20.0 24.4
1.0
18
1.0 12.4 32.2
SMAJ18Ae3 / SMAJ18CAe3
MBT MXT 20.0 22.1
1.0
18
1.0 13.7 29.2
SMAJ20e3 / SMAJ20Ce3
MBU MXU 22.2 27.1
1.0
20
1.0 11.2 35.8
SMAJ20Ae3 / SMAJ20CAe3
MBV MXV 22.2 24.5
1.0
20
1.0 12.3 32.4
SMAJ22e3 / SMAJ22Ce3
MBW MXW 24.4 29.8
1.0
22
1.0 10.2 39.4
SMAJ22Ae3 / SMAJ22CAe3
MBX MXX 24.4 26.9
1.0
22
1.0 11.3 35.5
(1) All ratings at 25ºC unless specified otherwise
(2) VBR measured after IT applied for 300µs, IT=square wave pulse or equivalent
(3) Surge current waveform per Fig.3 and derated per Fig.2
(4) For bidrectional types with VWM of 10 volts and less, the ID limit is doubled
(5) For the bidirectional SMAJ5.0CA, the maximum VBR is 7.25V
Copyright © 2010
Mar Rev C
www.Microsemi.com
2/6


Part Number SMAJ90Ae3
Description 400W Transient Voltage Suppressor protection device
Maker Microsemi
Total Page 6 Pages
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