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  Microsemi Electronic Components Datasheet  

UM9301 Datasheet

Commercial Attenuator Diode

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UM9301/UM9301SM
Commercial Attenuator Diode
PRODUCT PREVIEW
DESCRIPTION
The UM9301 PIN Diode utilizes special
overall chip geometry with an extremely
thick intrinsic “I” region, to offer unique
capabilities in both RF switch and
attenuator applications.
Volume production also makes the diode
an economical choice suitable for many
commercial low power equipments.
The UM9301 has been designed for use
in bridged TEE attenuator circuits
commonly utilized for gain and slope
control in CATV amplifiers.
Low distortion and high dynamic range are
characteristic of the diodes’ outstanding
performance.
The UM9301 is also appropriate for
switch applications, when little or no bias
voltage is available. Frequent applications
occur in portable 12 volt-powered
communications equipments, operating at
frequencies as low as 2 MHz.
IMPORTANT:Forthemostcurrentdata,consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Reverse Voltage
Reverse Current
Average Power Dissipation (1, 2)
VR 75
IR 10
PA 1.0
Storage Temperature
T stg
-65 to 175
Unit
Volts
µA
Watts
ºC
Operating Temperature
T op
-65 to 175 ºC
KEY FEATURES
Specified low distortion
Low distortion properties at low
reverse bias
Resistance specified at 3 current
points
High reliability fused-in-glass
construction
APPLICATIONS/BENEFITS
Little or no Bias required.
Operates as low as 2MHZ.
Available in leaded or surface
mount packages.
UM9301SM
UM9301
UM9301SM
(1) Mounted on 2” square by 0.06’ thick FR4 board with a 1” x 1” square 2-ounce copper pattern..
(2) Lead ½ inch. (12.7mm) Total to 25°C Contact.
Copyright 2005
Rev. A, 2005-07-05
Microsemi
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1


  Microsemi Electronic Components Datasheet  

UM9301 Datasheet

Commercial Attenuator Diode

No Preview Available !

UM9301/UM9301SM
Commercial Attenuator Diode
PRODUCT PREVIEW
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Parameter
Symbol Conditions
Min Typ. Max
Off Characteristics
Diode Resistance
Current for RS = 75 IR
Return Loss
Second Order Distortion
I = 100 mA; f = 100 MHZ
1.7 3.0
RS I = 1 mA; f = 100 MHZ
I = 0.01 mA; f = 100 MHZ
80 150
3000 5000
RS f = 100 MHZ
0.5 1.1 2.0
Frequency Range: 10-300MHZ
I RS = 75 @ 100MHZ
25
Diode Terminates 75 line
f1 = 10 MHZ; f2 = 13 MHZ
V
P = 50 dBmV; See Test Circuit
F1 = 67 MHZ; f2 = 77 MHZ
P = 50 dBmV; See Test Circuit
55 50
70
Third Order Distortion
F1 = 10 MHZ; F2 = 13 MHZ
V
P = 50 dBmV; See Test Circuit
Triple Beat; 205 +67 –77MHZ
P = 50 dBmV; See Test Circuit
75 65
95
Cross Modulation
Distortion
12 Channel Test
V P = 50 dBmV; See Test Circuit
Dix Hills Test Set
75
Reverse Current
Carrier Lifetime
IR V = 75 V
τ I = 10 mA
10
4.0
Dynamic characteristics
Capacitance
CT V = 0V; f = 100 MHZ
0.8
Units
mA
dB
-dB
-dB
-dB
-dB
-dB
µA
µs
pF
Copyright 2005
Rev. A, 2005-07-05
PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production
data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express
written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve
preliminary or production status and product specifications, configurations, and availability may
change at any time.
Microsemi
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2


Part Number UM9301
Description Commercial Attenuator Diode
Maker Microsemi
Total Page 5 Pages
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