2N2150 Datasheet | Microsemi

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/277 Devices 2N2150 2N2151 Qualified Level JANTX MAXIMUM RATINGS (TC = 250C unless otherwise noted) Ratings Symbol Value Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ Tc = +1000C(1) Operating & Storage Junction Temperature Range VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC 100 150 8.0 2.0 2.0 30 -65 to +200 Max. 3.3 Units Vdc Vdc Vdc Adc Adc W THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 0.3 W/0C for TC > +1000C Unit C/W TO-111- - See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = +250C) Characteristics Symbol V(BR)CEO VCBO ICEO ICBO ICEX IEBO ICES Min. 100 150 10 5.0 5.0 2.0 5.0 Max. Unit Vdc Vdc µAdc µAdc µAdc µAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 50 m Adc Collector-Emitter Breakdown Voltage IC = 100 µAdc Collector-Emitter Cutoff Current VCE = 80 Vdc Collector-Base Cutoff Current VCB = 120 Vdc Collector-Emitter Cutoff Current VCE = 120 Vdc, VBE = -1.0 Vdc Emitter-Base Cutoff Current VEB = 8.0 Vdc Collector-Emitter Cutoff Current VCE = 120 Vdc, VBE = 0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2150, 2N2151 JANTX SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 5.0 Vdc IC = 0.5 Adc, VCE = 5.0 Vdc IC = 0.1 Adc, VCE = 5.0 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc IC = 0.5 Adc, VCE = 5.0 Vdc IC = 0.1 Adc, VCE = 5.0 Vdc Base-Emitter Voltage Non -Saturated VCE = 5.0 Vdc, IC =1.0 Adc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc Base-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc 2N2150 h FE 2N2151 20 20 20 40 40 40 60 60 120 120 VBE VCE(sat) VBE(sat) 1.2 1.0 1.2 Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of...