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2N2604 - (2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR

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www.DataSheet4U.com TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices 2N2604 2N2605 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PT TJ, Tstg Symbol RθJC 2N2604 80 2N2605 70 Units Vdc Vdc Vdc mAdc mW/0C 0 C Unit C/mW @ TA = +250C(1) Operating & Storage Junction Temperature Range 60 6.0 30 400 -65 to +200 Max. 0.437 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.28 mW/0C above TA = +250C 0 TO-46* (TO-206AB) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max.
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