2N2609 - P-CHANNEL J-FET

Microsemi Corporation

Datasheet Details

Part number	2N2609
Manufacturer	Microsemi
File Size	110.91 KB
Description	P-CHANNEL J-FET
Datasheet	2N2609 Datasheet
Additional preview pages of the 2N2609 datasheet.

📁 Similar Datasheet

2N2609 - P-CHANNEL POWER MOSFET (NES)
2N2609 - P-Channel JFET (InterFET)
2N2609 - GENERAL PURPOSE JFET (Motorola)
2N2604 - PNP SIlicon Transistor (Central)
2N2604UB - PNP SILICON LOW POWER TRANSISTOR (Microsemi)
2N2605 - AMPLIFIER TRANSISTOR (Motorola)
2N2605 - PNP SIlicon Transistor (Central)
2N2605UB - PNP SILICON LOW POWER TRANSISTOR (Microsemi)
2N2608 - GENERAL PURPOSE JFET (Motorola)
2N2608 - P-Channel JFET (InterFET)

Other Datasheets by Microsemi Corporation

2N2604 - (2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR
2N2605 - (2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR
2N2150 - NPN POWER SILICON TRANSISTOR
2N2432 - NPN SILICON LOW POWER TRANSISTOR
2N2432A - NPN SILICON LOW POWER TRANSISTOR
2N2880 - 5 Amp/ 80V/ Planar/ NPN Power Transistors JAN/JTX/JANTXV/JANS
2N2904 - PNP SWITCHING SILICON TRANSISTOR
2N2904A - PNP SWITCHING SILICON TRANSISTOR

Full PDF Text Transcription

Click to expand full text

TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/296 Devices 2N2609 Qualified Level JAN ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted) Parameters / Test Conditions Symbol Value Gate-Source Voltage Power Dissipation (1) TA = +250C Operating Junction & Storage Temperature Range (1) Derate linearly 1.71 mW/0C for TA > +250C. VGSS PD Top, Tstg 30 300 -65 to +200 Units V mW 0 C TO-18 (TO-206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted) PARAMETERS / TEST CONDITIONS Symbol Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 µAdc Gate Reverse Current VDS = 0, VGS = 30 Vdc VDS = 0, VGS = 15 Vdc Drain Current VGS = 0, VDS = 5.0 Vdc Gate-Source Cutoff Voltage VDS = 5.0 V, ID = 1.

Published: May 15, 2014 |