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2N3847 Datasheet

(2N3846 / 2N3847) NPN POWER SILICON TRANSISTOR

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NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/412
Devices
2N3846
2N3847
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N3846 2N3847
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
VCEO 200 300
VCBO 300 400
VEBO
10
IC 20
@
@
TA
TC
=
=
+250C (1)
+1000C (2)
DataSPhTeet4U.com
4.0
150
Operating & Storage Temperature Range
Top, Tstg
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
1) Derate linearly 26.6 mW/0C to +1750C
2) Derate linearly 2 W/0C to +1750C
RθJC
0.5
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc; IB = 0
2N3846
2N3847
Collector-Emitter Cutoff Current
VCE = 300 Vdc; VBE = 0
2N3846
VCE = 400 Vdc; VBE = 0
Collector-Emitter Cutoff Current
2N3847
VCE = 200 Vdc; IB = 0
2N3846
VCE = 300 Vdc; IB = 0
Emitter-Base Cutoff Current
2N3847
VBE = 10 Vdc; IC = 0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
V(BR)CEO
ICES
ICEO
IEBO
Units
Vdc
Vdc
Vdc
Adc
W
W
0C
Unit
0C/W
TO-63*
*See Appendix A for Package
Outline
Min. Max.
Unit
200 Vdc
300
2 mAdc
2
5 mAdc
5
250 µAdc
120101
Page 1 of 2
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  Microsemi Electronic Components Datasheet  

2N3847 Datasheet

(2N3846 / 2N3847) NPN POWER SILICON TRANSISTOR

No Preview Available !

www.DataSheet4U.com
et4U.com
2N3846, 2N3847 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Forward-Current Transfer Ratio
IC = 1 Adc; VCE = 3.0 Vdc
IC = 5 Adc; VCE = 3.0 Vdc
hFE
IC = 10 Adc; VCE = 3.0 Vdc
Base-Emitter Voltage
VCE = 3 Vdc; IC = 10 Adc
Base-Emitter Saturated Voltage
IB = 1.6 Adc; IC = 10 Adc
Collector-Emitter Saturated Voltage
IB = 1.6 Adc; IC = 10 Adc
VBE
VBE(sat)
VCE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 5 Adc, VCE = 10 Vdc, f = 1 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
hfe
hfe
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VBE(off) ~ -7.5 Vdc; IC = 10 Adc;
IB1 = 2 Adc; IB2 = -2 Adc; RL = 15
Turn-Off Time
VBE(off) ~ -7.5 Vdc; IC = 10 Adc;
IB1 = 2 Adc; IB2 = 2 Adc; RL = 15
DataSheet4U.com
ton
toff
SAFE OPERATING AREA
DC Tests
TC = +1000C; VCE = 0 Vdc, IC = 0 Adc (See Figure 3 on Mil-PRF-19500/412)
Test 1
VCE = 7.5 Vdc; IC = 20 Adc; tp = 1.0 s; 1 cycle
Test 2
VCE = 200 Vdc; IC = 100 mAdc; tp = 1.0 s, 1 cycle
Test 3
VCE = 58 Vdc; IC = 1.0 Adc; tp = 1.0 s, 1 cycle
Burnout by Pulsing (2N3847 only)
TC = +1000C; VCE = 300 Vdc; IC = 20 mAdc; tp = 1.0 s, 1 cycle
Unclamped Inductive Sweep
TC = +1000C; IC = 20 Adc; IB = 2 Adc (See Figure 4 on Mil-PRF-19500/412)
Clamped Inductive Sweep
TC = +1000C; IC = 20 Adc; IB = 2 Adc (See Figure 5 on Mil-PRF-19500/412)
3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Min. Max. Unit
70
40 240
12 60
1.20 Vdc
1.30 Vdc
0.75 Vdc
10 35
50 250
750
4
7
pF
µs
µs
6 Lake Street, Lawrence, MA 01841
DataSheet4U.com1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
DataSheet4 U .com
120101
Page 2 of 2


Part Number 2N3847
Description (2N3846 / 2N3847) NPN POWER SILICON TRANSISTOR
Maker Microsemi Corporation
Total Page 2 Pages
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