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  Microsemi Electronic Components Datasheet  

2N4240 Datasheet

NPN Silicon Power Transistors

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7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
APPLICATIONS:
Off-Line Inverters
Switching Regulators
Motor Controls
Deflection Circuits
DC-DC Converters
High Voltage Amplifiers
FEATURES:
High Voltage: 250 to 500V High Current: 2 Amps
Fast Switching: tf < 3µ sec. Low VCE (SAT)
High Power: 35 Watts
2N4240
5 Amp, 500V,
High Voltage
NPN Silicon Power
Transistors
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200° C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
VCBO*
VCEO*
Collector-Base Voltage
Collector-Emitter Voltage
VCER*
VEBO*
Collector-Emitter Voltage RBE = 50
Emitter-Base Voltage
IC* Peak Collector Current
IC* Continuous Collector Current
IB* Base Current
TSTG*
TJ*
Storage Temperature
Operating Junction Temperature
* Lead Temperature 1/16" from Case for 10 Sec.
PT*
θ JC
Power Dissipation
TC = 25° C
Thermal Impedance
* Indicates JEDEC registered data.
MSC1058.PDF 05-19-99
TO-66
VALUE
500
300
400
6
5
2
1
-65 to 200
-65 to 200
235
35
5.0
UNITS
Volts
Volts
Volts
Volts
Amps
Amps
Amps
°C
°C
°C
Watts
° C/W


  Microsemi Electronic Components Datasheet  

2N4240 Datasheet

NPN Silicon Power Transistors

No Preview Available !

ELECTRICAL CHARACTERISTICS:
(25°Case Temperature Unless Otherwise Noted)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VCEO(sus)*
VCER(sus)
ICEV*
ICEV*
ICEO*
IEB0*
hFE*
VCE(sat)*
VBE(sat)*
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
TC = 150° C
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current
Transfer Ratio
(Note 1)
Collector-Emitter
Saturation Voltage
(Note 1)
Base-Emitter Saturation
Voltage (Note 1)
IC = 0.2 Amp (Notes è and 2)
IC = 0.2A, RBE = 50(Notes 1 and 2)
VCE = 450V, VBE = -1.5V
VCE = 300V, VBE = -1.5V
VCE = 150V, IB = 0
VEB = 6V, IC = 0
IC = 0.1A, VCE = 10V
IC = 0.75A, VCE = 10V
IC = 0.75A, VCE = 2V
IC = 0.75A, IB = .075A
IC = 0.75A, IB = .075A
IS/b
ES/b
hfe*
I hfe I*
COb
tr*
ts*
tf*
Second-Breakdown
Collector Current (with
base forward biased)
Second-Breakdown
Energy (with base
reverse biased)
Common-Emitter Small-
Signal Forward Current
Transfer Ratio
Common-Emitter Small-
Signal Forward Current
Transfer Ratio, f = 5 MHz
Collector-Base
Capacitance
Rise Time
Storage Time
Fall Time
VCE = 100V, t = 1.0sec.
VEB = 4V, RBE = 20, L = 100µh
VCE = 10V, IC = 0.2A, f = 5 MHz
VCE = 10V, IC = 0.2A
VCB = 10V, IE = 0, f = 1.0MHz
IC = .75A, IB2 = .075A
IC = .75A, IB1 = IB2 = .075A
IC = .75A, IB1 = IB2 = .075A
Note 1: Pulse Test: Pulse width = 300µSec., Rep. Rate 60Hz.
Note 2: Caution - Do not use Curve Tracer.
* Indicates JEDEC registered data.
MSC1058.PDF 05-19-99
2N4240
VALUE
Min. Max.
300 ----
Units
Volts
400 ---- Volts
---- 2.0 mA.
---- 5.0 mA.
---- 5.0 mA.
---- 0.5 mA.
40 ---- ----
30 150 ----
10 100 ----
---- 1.0 Volts
---- 1.8 Volts
0.35 ----
A
50 ---- µJ
3 ---- ----
3.0 ---- ----
---- 120 pf
---- .05 µsec.
---- 6.0 µsec.
---- 3.0 µsec.


Part Number 2N4240
Description NPN Silicon Power Transistors
Maker Microsemi Corporation
Total Page 3 Pages
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