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  Microsemi Electronic Components Datasheet  

2N6547 Datasheet

(2N6546 / 2N6547) NPN POWER SILICON TRANSISTOR

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NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/525
Devices
www.DataSheet4U.com
2N6546
2N6547
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6546 2N6547
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = +250C (1)
@ TC = +1000C (1)
Operating & Storage Temperature Range
VCEO
VCEX
VEBO
IB
IC
PT
Top, Tstg
300 400
600 850
8
10
15
175
100
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
RθJC
1.0
1) Between TC = +250C and TC = +2000C, linear derating factor (average) = 1.0 W/0C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N6546
2N6547
Collector-Emitter Cutoff Current
VCE = 600 Vdc; VBE = 1.5 Vdc
2N6546
VCE = 850 Vdc; VBE = 1.5 Vdc
Emitter-Base Cutoff Current
2N6547
VEB = 8 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
V(BR)CEO
ICEX
IEBO
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
TO-3 (TO-204AA)*
Unit
0C/W
*See Appendix A for Package
Outline
Min. Max.
Unit
300 Vdc
400
1.0 mAdc
1.0
1.0 mAdc
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N6547 Datasheet

(2N6546 / 2N6547) NPN POWER SILICON TRANSISTOR

No Preview Available !

2N6546, 2N6547 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min. Max.
Forward-Current Transfer Ratio
IC = 1 Adc; VCE = 2 Vdc
IC = 5 Adc; VCE = 2 Vdc
hFE
15
12 60
IC = 10 Adc; VCE = 2 Vdc
Base-Emitter Saturated Voltage
IB = 2.0 Adc; IC = 10 Adc
www.DataSheet4U.com Collector-Emitter Saturated Voltage
IB = 2.0 Adc; IC = 10 Adc
IB = 3.0 Adc; IC = 15 Adc
VBE(sat)
VCE(sat)
6
1.6
1.5
5.0
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 0.1 MHz f 1.0 MHz
hfe
Cobo
6.0 30
500
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc
Turn-Off Time
VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc
ton 1.0
toff 4.7
SAFE OPERATING AREA
DC Tests
TC = +250C; tp = 1 s; 1 cycle (See Figure 3 of MIL-PRF-19500/525)
Test 1
VCE = 11.7 Vdc; IC = 15 Adc
Test 2
VCE = 20 Vdc; IC = 8.75 Adc
Test 3
VCE = 250 Vdc; IC = 45 mAdc
2N6546
VCE = 350 Vdc; IC = 30 mAdc
2N6547
Unclamped Inductive lOAD
TC = +250C; duty cycle 10%; RS = 0.1 ; tr = tf 500 ηs (See Figure 4 of MIL-PRF-19500/525)
Test 1
Tp = 5 ms; (vary to obtain IC); RBB1 = 15 ; VBB1 = 38.5 Vdc; RBB2 = 50 ;
VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 15 Adc; L = 10 µH
Test 2
Tp = 5 ms; (vary to obtain IC); RBB1 = 15 ; VBB1 = 38.5 Vdc; RBB2 = 50 ;
VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 100 mAdc; L = 1 mH
Clamped Inductive Load
TA = +250C; duty cycle 5%; Tp = 1.5 ms; (vary to obtain IC); VCC = 20 Vdc; IC = 8 Adc; L = 180 µH
(See Figure 5 of MIL-PRF-19500/525)
Clamped Voltage = 350 Vdc
2N6546
Clamped Voltage = 450 Vdc
2N6547
3.) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Unit
Vdc
Vdc
pF
µs
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N6547
Description (2N6546 / 2N6547) NPN POWER SILICON TRANSISTOR
Maker Microsemi Corporation
Total Page 2 Pages
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