| Part number | 2N6547 |
|---|---|
| Datasheet | 2N6547_MicrosemiCorporation.pdf |
| File Size | 80.79 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | NPN POWER SILICON TRANSISTOR |
|
|
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/525 Devices .. 1.0 RθJC 1) Between TC = +250C and TC = +2000C, linear derating factor (average) = 1.0 W/0C Characteristics , Junction-to-Case 0 Characteristics Symbol Min. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 600 Vdc;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6547 | NPN SILICON POWER TRANSISTORS | ON Semiconductor |
 |
2N6547 | High voltage fast-switching NPN power transistor | STMicroelectronics |
 |
2N6547 | Silicon NPN Transistor | NTE |
 |
2N6547 | NPN SILICON POWER TRANSISTORS | Motorola |
 |
2N6547 | NPN Transistor | Multicomp |
See all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N6546 | NPN POWER SILICON TRANSISTOR |
| 2N6051 | PNP DARLINGTON POWER SILICON TRANSISTOR |
| 2N6052 | PNP DARLINGTON POWER SILICON TRANSISTOR |
| 2N6080 | RF & MICROWAVE TRANSISTORS |
| 2N6081 | RF & MICROWAVE TRANSISTORS |
| 2N6082 | RF & MICROWAVE TRANSISTORS |
| 2N6083 | RF & MICROWAVE TRANSISTORS |
| 2N6084 | RF & MICROWAVE TRANSISTORS |
| 2N6193 | PNP MEDIUM POWER SILICON TRANSISTOR |
| 2N6255 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
