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  Microsemi Electronic Components Datasheet  

2N6648 Datasheet

(2N6648 - 2N6650) PNP DARLINGTON POWER SILICON TRANSISTOR

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TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/527
Devices
2N6648
2N6649
2N6650
Qualified Level
JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS
Ratings
Symbol 2N6648 2N6649 2N6650 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
-40 -60 -80
-40 -60 -80
-5.0
-0.25
-10
5.0
85
-65 to +175
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance Junction-to-Case
1) Derate linearly 33.3 mW/0C for TA > +250C
2) Derate linearly 567 mW/0C for TC > +250C
RθJC
1.76 0C/W
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N6648
2N6649
V(BR)CEO
2N6650
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, RBB = 100
2N6648
2N6649
V(BR)CER
2N6650
Collector-Base Cutoff Current
VCB = -40 Vdc
2N6648
ICBO
VCB = -60 Vdc
2N6649
VCB = -80 Vdc
2N6650
Min.
-40
-60
-80
-40
-60
-80
TO-3* (TO-204AA)
*See Appendix A for
package outline
Max.
Unit
Vdc
Vdc
-1.0
-1.0 mAdc
-1.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N6648 Datasheet

(2N6648 - 2N6650) PNP DARLINGTON POWER SILICON TRANSISTOR

No Preview Available !

2N6648, 2N6649, 2N6650 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = -40 Vdc
2N6648
VCE = -60 Vdc
2N6649
VCE = -80 Vdc
Collector-Emitter Cutoff Current
2N6650
VCE = -40 Vdc, VBE = 1.5 Vdc
2N6648
VCE = -60 Vdc, VBE = 1.5 Vdc
2N6649
VCE = -80 Vdc, VBE = 1.5 Vdc
ON CHARACTERISTICS (3)
2N6650
Forward-Current Transfer Ratio
IC = -1.0 Adc, VCE = 3.0 Vdc
IC = -5.0 Adc, VCE = 3.0 Vdc
IC = -10 Adc, VCE = 3.0 Vdc
Collector-Emitter Saturation Voltage
IC =-5 .0 Adc, IB = -10 mAdc
IC = -10 Adc, IB = -0.1 Adc
Base-Emitter Voltage
IC = -5.0 Adc, VCE = -3.0 Vdc
IC = -10 Adc, VCE = -3.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC =- 1.0 Adc, VCE = -5.0 Vdc, f = 1.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = -30 Vdc; IC = -5.0 Adc; IB1 =- 20 mAdc
Turn-Off Time
VCC = -30 Vdc; IC = -5.0 Adc; IB1 = -IB2 = 20 mAdc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = -8.5 Vdc, IC = -10 Adc
Test 2
VCE = -25 Vdc, IC = -3.4 Adc
Test 3
VCE = -40 Vdc, IC = -0.9 Adc
2N6648
VCE = -60 Vdc, IC = -0.3 Adc
2N6449
VCE = -80 Vdc, IC = -0.14 Adc
2N6650
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
IEBO
ICEO
ICEX
hFE
VCE(sat)
VBE(on)
hfe
Cobo
ton
toff
Min.
Max.
-10
-1.0
-1.0
-1.0
-0.3
-0.3
-0.3
Unit
mAdc
mAdc
mAdc
300
1,000
100
20,000
-2.0
-3.0
-2.8
-4.5
Vdc
Vdc
50 400
300
2.5
10
pF
µs
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N6648
Description (2N6648 - 2N6650) PNP DARLINGTON POWER SILICON TRANSISTOR
Maker Microsemi Corporation
Total Page 2 Pages
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