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2N6649, 2N6648 Datasheet - Microsemi Corporation

2N6649 PNP DARLINGTON POWER SILICON TRANSISTOR

TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6648 2N6649 2N6650 Unit VCEO VCBO VEBO IB IC -40 -40 -60 -80 -60 -80 -5.0 -0.25 -10 5.0 85 -65 to +175 Max. 1.76 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W www.DataSheet4U.com @ TA = +250C (1) PT @ T.

2N6648_MicrosemiCorporation.pdf

This datasheet PDF includes multiple part numbers: 2N6649, 2N6648. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N6649, 2N6648

Manufacturer:

Microsemi ↗ Corporation

File Size:

76.28 KB

Description:

Pnp darlington power silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: 2N6649, 2N6648.
Please refer to the document for exact specifications by model.

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2N6649 2N6648 PNP DARLINGTON POWER SILICON TRANSISTOR Microsemi Corporation

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