2N6649 Datasheet | Microsemi

TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6648 2N6649 2N6650 Unit VCEO VCBO VEBO IB IC -40 -40 -60 -80 -60 -80 -5.0 -0.25 -10 5.0 85 -65 to +175 Max. 1.76 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W .. @ TA = +250C (1) PT @ TC = +250C (2) Operating & Storage Junction Temperature Range TJ, Tstg Symbol RθJC THERMAL CHARACTERISTICS Characteristics Thermal Resistance Junction-to-Case 1) Derate linearly 33.3 mW/0C for TA > +250C 2) Derate linearly 567 mW/0C for TC > +250C 0 TO-3- (TO-204AA) - See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N6648 2N6649 2N6650 2N6648 2N6649 2N6650 2N6648 2N6649 2N6650 V(BR)CEO -40 -60 -80 -40 -60 -80 -1.0 -1.0 -1.0 Vdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω V(BR)CER Vdc Collector-Base Cutoff Current VCB = -40 Vdc VCB = -60 Vdc VCB = -80 Vdc ICBO mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6648, 2N6649, 2N6650 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = -40 Vdc VCE = -60 Vdc VCE = -80 Vdc Collector-Emitter Cutoff Current VCE = -40 Vdc, VBE = 1.5 Vdc VCE = -60 Vdc, VBE = 1.5 Vdc VCE = -80 Vdc, VBE = 1.5 Vdc Symbol IEBO 2N6648 2N6649 2N6650 2N6648 2N6649 2N6650 Min. Max. -10 -1.0 -1.0 -1.0 -0.3 -0.3 -0.3 Unit...