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2N6649 - PNP DARLINGTON POWER SILICON TRANSISTOR

Download the 2N6649 datasheet PDF. This datasheet also covers the 2N6648 variant, as both devices belong to the same pnp darlington power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6648_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Microsemi (Microchip)

Part Number Description
2N6648 PNP DARLINGTON POWER SILICON TRANSISTOR
2N6650 PNP DARLINGTON POWER SILICON TRANSISTOR
2N6674 NPN POWER SILICON TRANSISTOR
2N6675 NPN POWER SILICON TRANSISTOR
2N6676 (2N66xx) NPN POWER SILICON TRANSISTOR

Full PDF Text Transcription

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TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6648 2N6649 2N6650 Unit VCEO VCBO VEBO IB IC -40 -40 -60 -80 -60 -80 -5.0 -0.25 -10 5.0 85 -65 to +175 Max. 1.76 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W www.DataSheet4U.com @ TA = +250C (1) PT @ TC = +250C (2) Operating & Storage Junction Temperature Range TJ, Tstg Symbol RθJC THERMAL CHARACTERISTICS Characteristics Thermal Resistance Junction-to-Case 1) Derate linearly 33.
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