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2N6649 - PNP DARLINGTON POWER SILICON TRANSISTOR

This page provides the datasheet information for the 2N6649, a member of the 2N6648 PNP DARLINGTON POWER SILICON TRANSISTOR family.

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TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6648 2N6649 2N6650 Unit VCEO VCBO VEBO IB IC -40 -40 -60 -80 -60 -80 -5.0 -0.25 -10 5.0 85 -65 to +175 Max. 1.76 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W www.DataSheet4U.com @ TA = +250C (1) PT @ TC = +250C (2) Operating & Storage Junction Temperature Range TJ, Tstg Symbol RθJC THERMAL CHARACTERISTICS Characteristics Thermal Resistance Junction-to-Case 1) Derate linearly 33.
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