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  Microsemi Electronic Components Datasheet  

2N6690 Datasheet

NPN POWER SILICON TRANSISTOR

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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/537
Devices
2N6674
2N6675
2N6689
2N6690
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C
@ TC = +250C(1)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 1.0 W/0C for TC > 250C
2) Derate linearly 34.2 mW/0C for TA > 250C
3) Derate linearly 17.1 mW/0C for TA > 250C
Symbol
VCEO
VCBO
VCEX
VEBO
IB
IC
PT
Top; Tstg
Symbol
RθJC
2N6674 2N6675
2N6689 2N6690
300 400
450 650
450 650
7.0
5.0
15
2N6674
2N6675
6.0(2)
175
2N6689
2N6690
3.0(3)
175
-65 to +200
Max.
1.0
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N6674, 2N6689
2N6675, 2N6690
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 450 Vdc, VBE = -1.5 Vdc
2N6674, 2N6689
ICEX
VCE = 650 Vdc, VBE = -1.5 Vdc
2N6675, 2N6690
Unit
Vdc
Vdc
Vdc
Vdc
Adc 2N6674, 2N6675
Adc TO-3 (TO-204AA)*
W
W
0C
Unit
0C/W
2N6689, 2N6690
TO-61*
* See Appendix A for Package
Outline
Min. Max.
Unit
300 Vdc
400
0.1 mAdc
0.1
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N6690 Datasheet

NPN POWER SILICON TRANSISTOR

No Preview Available !

2N6674, 2N6675, 2N6689, 2N6690 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min. Max. Unit
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
Collector-Base Cutoff Current
IEBO 2.0 mAdc
VCB = 450 Vdc
VCB = 650 Vdc
ON CHARACTERISTICS (4)
2N6674, 2N6689
2N6675, 2N6690
ICBO
1.0 mAdc
1.0
Forward-Current Transfer Ratio
IC = 1 Adc; VCE = 3.0 Vdc
IC = 10 Adc; VCE = 2.0 Vdc
Collector-Emitter Saturation Voltage
hFE 15 40
8 20
IC = 10 Adc; IB = 2 Adc
IC = 15 Adc; IB = 5 Adc
Base-Emitter Saturation Voltage
IC = 10 Adc; IB = 2 Adc
VCE(sat)
VBE(sat)
1.0 Vdc
5.0
1.5 Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 5 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
hfe
Cobo
3.0 10
150 500
pF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
See Figure 3 of MIL-PRF-19500/537
Fall Time
Cross-Over Time
td
tr
ts
tf
tc
0.1 µs
0.6 µs
2.5 µs
0.5 µs
0.5 µs
SAFE OPERATING AREA
DC Tests (continuous dc)
TC = +250C, power application time = 1.0 s; 1 Cycle, (See Figure 4 of MIL-PRF-19500/537)
Test 1
VCE = 11.7 Vdc, IC = 15 Adc
Test 2
All Types
VCE = 30 Vdc, IC = 5.9 Adc
Test 3
2N6674, 2N6675
VCE = 100 Vdc, IC = 0.25 Adc
Test 4
All Types
VCE = 25 Vdc, IC = 7.0 Adc
Test 5
2N6689, 2N6690
VCE = 300 Vdc, IC = 20 mAdc
2N6674, 2N6689
VCE = 400 Vdc, IC = 10 mAdc
2N6675, 2N6690
Clamped Switching
TA = 250C; VCC = 15 Vdc; Load condition B; RBB1 = 5 ; RBB2 = 1.5 ;
VBB2 = 5 Vdc; L = 50 µH; R of inductor = .05; RL = R of inductor.
Clamp Voltage = 350; IC = 10 Adc
2N6674, 2N6689
Clamp Voltage = 450; IC = 10 Adc
2N6675, 2N6690
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
(See Figure 6 of MIL-PRF-19500/537)
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N6690
Description NPN POWER SILICON TRANSISTOR
Maker Microsemi Corporation
Total Page 2 Pages
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