Datasheet4U Logo Datasheet4U.com

APT100GT120JR - Thunderbolt IGBT

Datasheet Summary

Features

  • Low Forward Voltage Drop.
  • Low Tail Current.
  • Integrated Gate Resistor Low EMI, High Reliability.
  • RoHS Compliant.
  • RBSOA and SCSOA Rated.
  • High Frequency Switching to 50KHz.
  • Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitabl.

📥 Download Datasheet

Datasheet preview – APT100GT120JR

Datasheet Details

Part number APT100GT120JR
Manufacturer Microsemi Corporation
File Size 214.07 KB
Description Thunderbolt IGBT
Datasheet download datasheet APT100GT120JR Datasheet
Additional preview pages of the APT100GT120JR datasheet.

📁 Similar Datasheet

  • APT100GT60JR - Thunderbolt IGBT (Advanced Power Technology)
  • APT100GF60B2R - The Fast IGBT is a new generation of high voltage power IGBTs. (Advanced Power Technology)
  • APT100GF60JR - The Fast IGBT is a new generation of high voltage power IGBTs. (Advanced Power Technology)
  • APT100GF60JRD - The Fast IGBT is a new generation of high voltage power IGBTs. (Advanced Power Technology)
  • APT100GF60LR - The Fast IGBT is a new generation of high voltage power IGBTs. (Advanced Power Technology)
  • APT1001R1AVR - MOSFET (Advanced Power Technology)
  • APT1001R1BN - MOSFET (Advanced Power Technology)
  • APT1001R1BVFR - MOSFET (Advanced Power Technology)
  • APT1001R1HVR - MOSFET (Advanced Power Technology)
  • APT1001R3BN - MOSFET (Advanced Power Technology)
Other Datasheets by Microsemi Corporation

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com APT100GT120JR 1200V, 100A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. E G C E Features • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Published: |