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  Microsemi Electronic Components Datasheet  

APT40GF120JRDQ2 Datasheet

FAST IGBT & FRED

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TYPICAL PERFORMANCE CURVES
APT14200G0F1V20JRDQ2
APT40GF120JRDQ2
FAST IGBT & FRED
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an Microsemi free wheeling Ultra Fast Recovery
Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• RBSOA and SCSOA Rated
• Ultra Low Leakage Current
www.DataSheet4UUl.tcroamfast Soft Recovery Anti-parallel Diode
• Intergrated Gate Resistor: Low EMI, High Reliability
EE
G C SOT-227
ISOTOP®
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol Parameter
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
All Ratings: TC = 25°C unless otherwise specified.
APT40GF120JRDQ2
UNIT
1200
±30
Volts
80
42 Amps
150
150A @ 1200V
347
-55 to 150
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA)
Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
1200
4.5 5.5 6.5
2.5 3.0
3.1
200
1500
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
µA
nA
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT40GF120JRDQ2 Datasheet

FAST IGBT & FRED

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
www.DataSheet4U.ctorm
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Characteristic
Test Conditions
Input Capacitance
Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (WithDiode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (WithDiode) 55
Turn-off Switching Energy 6
Gate Charge
VGE = 15V
VCE = 600V
IC = 50A
TJ = 150°C, RG = 1.0Ω, 7 VGE =
15V, L = 100µH,VCE = 1200V
Inductive Switching (25°C)
VCC = 800V
VGE = 15V
IC = 50A
RG = 1.07
TJ = +25°C
Inductive Switching (125°C)
VCC = 800V
VGE = 15V
IC = 50A
RG = 1.07
TJ = +125°C
MIN
150
APT40GF120JRDQ2
TYP MAX UNIT
3460
385
225
9.5
340
30
205
pF
V
nC
25
43
260
70
3600
4675
2640
25
43
300
95
3750
6400
3400
A
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJC
VIsolation
Junction to Case (IGBT)
Junction to Case (DIODE)
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
MIN
2500
WT Package Weight
Torque Maximum Terminal & Mounting Torque
TYP
1.03
29.2
MAX
0.36
1.1
10
1.1
UNIT
°C/W
Volts
oz
gm
Ib•in
N•m
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471.
4
Eon1
is
the clamped inductive turn-on energy of
adding to the IGBT turn-on loss. Tested
the IGBT only, without the effect
in inductive switching test circuit
of a commutating diode reverse recovery current
shown in figure 21, but with a Silicon Carbide diode.
5
Eon2
is
the clamped inductive
loss. (See Figures 21,
turn-on
22.)
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Mircosemi Reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT40GF120JRDQ2
Description FAST IGBT & FRED
Maker Microsemi Corporation
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