APT40GF120JRDQ2 Datasheet | Microsemi

TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 1200V FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT bined with an Microsemi free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. - Low Forward Voltage Drop - RBSOA and SCSOA Rated - High Freq. Switching to 20KHz - Ultra Low Leakage Current ISOTOP ® "UL Recognized" file # E145592 - Ultrafast Soft Recovery Anti-parallel Diode .. - Intergrated Gate Resistor: Low EMI, High Reliability MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current All Ratings: TC = 25°C unless otherwise specified. APT40GF120JRDQ2 UNIT Volts 1200 ±30 80 42 150 150A @ 1200V 347 -55 to 150 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) MIN TYP MAX Units 1200 4.5 5.5 2.5 3.1 200 2 2 6.5 3.0 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES RG(int) µA n A Ω 5-2006 052-6285 Rev B Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://.microsemi....