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  Microsemi Electronic Components Datasheet  

APT41H50S Datasheet

N-Channel FREDFET

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APT41H50B
APT41H50S
500V, 41A, 0.15Ω Max, trr, ≤215ns
N-Channel Ultrafast Recovery FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and
a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
www.DataSheet4U.com
TO-247
D3PAK
APT41H50B
APT41H50S
Single die FREDFET G
D
S
FEATURES
• Fast switching with low EMI
• Very Low trr for maximum reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• UPS
• Welding
• Solar inverters
• Telecom rectifiers
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Ratings
41
26
135
±30
930
21
Unit
A
V
mJ
A
Min Typ Max Unit
625 W
0.20
°C/W
0.11
-55 150
°C
300
0.22 oz
6.2 g
10 in·lbf
1.1 N·m


  Microsemi Electronic Components Datasheet  

APT41H50S Datasheet

N-Channel FREDFET

No Preview Available !

Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
500
∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance 3
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 21A
VGS(th)
∆VGS(th)/∆TJ
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = VDS, ID = 1mA
3
IDSS Zero Gate Voltage Drain Current
VDS = 600V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
Dynamic Characteristics
Symbol
gfs
www.DataSheet4U.cCoCmrissss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 21A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 333V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 21A,
VDS = 250V
Resistive Switching
VDD = 333V, ID = 21A
RG = 4.7Ω 6 , VGG = 15V
Typ
0.60
0.12
4
-10
APT41H50B_S
Max Unit
V
V/°C
0.15 Ω
5V
mV/°C
250
1000
µA
±100 nA
Typ Max Unit
32 S
6810
90
735
425 pF
215
170
38 nC
80
29
35 ns
80
26
Source-Drain Diode Characteristics
Symbol Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 1
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Irrm Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 21A, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 21A 3
diSD/dt = 100A/µs
TJ = 125°C
TJ = 25°C
TJ = 125°C
VDD = 100V
TJ = 25°C
TJ = 125°C
ISD ≤ 21A, di/dt ≤1000A/µs, VDD = 333V,
TJ = 125°C
Min
Typ Max Unit
41
A
135
1.0
215
370
0.90
2.6
8.6
12.7
V
ns
µC
A
30 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 4.22mH, RG = 4.7Ω, IAS = 21A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.84E-7/VDS^2 + 3.75E-8/VDS + 1.05E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT41H50S
Description N-Channel FREDFET
Maker Microsemi Corporation
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