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  Microsemi Electronic Components Datasheet  

APT8DQ60SAG Datasheet

(APT8DQ60x) ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

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APT8DQ60SAG pdf
600V 8A
APT8DQ60K APT8DQ60SA
APT8DQ60KG* APT8DQ60SAG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• PFC
PRODUCT FEATURES
• Ultrafast Recovery Times
PRODUCT BENEFITS
• Low Losses
• Soft Recovery Characteristics • Low Noise Switching
• Popular TO-220 Package or
• Cooler Operation
Surface Mount D2 PAK Package
• Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Avalanche Energy Rated
• Increased System Power
Density
(K)
TO-220
1
2
1
D2PAK
(SA)
12
2
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: TC = 25°C unless otherwise specified.
APT8DQ60K_SA(G)
UNIT
VR
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VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
EAVL
TJ,TSTG
TL
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 128°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
600
8
16
110
20
-55 to 175
300
Volts
Amps
mJ
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
VF Forward Voltage
IRM Maximum Reverse Leakage Current
CT Junction Capacitance, VR = 200V
IF = 8A
IF = 16A
IF = 8A, TJ = 125°C
VR = 600V
VR = 600V, TJ = 125°C
MIN TYP MAX UNIT
2.0 2.4
2.5 Volts
1.5
25
µA
500
16 pF
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT8DQ60SAG Datasheet

(APT8DQ60x) ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

No Preview Available !

APT8DQ60SAG pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
trr
trr
Qrr
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 8A, diF/dt = -200A/µs
VR = 400V, TC = 25°C
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 8A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 8A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
MIN
-
-
-
-
-
-
-
-
-
-
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
RθJC Junction-to-Case Thermal Resistance
MIN
WT Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT8DQ60K_SA(G)
TYP MAX UNIT
14
ns
19
17 nC
2 - Amps
90 ns
160 nC
3 - Amps
43 ns
250 nC
11 Amps
TYP
0.07
1.9
MAX
2.7
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
3.0
2.5 D = 0.9
2.0 0.7
1.5 0.5
Note:
1.0 0.3
t1
t2
0.5 0.1
SINGLE PULSE
Duty Factor D = t1/t2
0.05
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-3
10-2
10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (°C)
TC (°C)
Dissipated Power
(Watts)
1.93
0.00078
0.773
0.0246
ZimEpXTedaarencthees:eCxtaesrenatol tshienrkm, al
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL


Part Number APT8DQ60SAG
Description (APT8DQ60x) ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Maker Microsemi Corporation
Total Page 4 Pages
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