APTGF50DH60T1G - Asymmetrical - Bridge NPT IGBT Power Module

Features

Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated.
Very low stray inductance - Symmetrical design.
Internal thermistor for temperature monitoring.
High level of integration Benefits.
Outstanding performance at high frequency operation.
Direct mounting to heatsink (isolated package).
L.

Part number	APTGF50DH60T1G
Manufacturer	Microsemi (now Microchip Technology)
File Size	274.33 KB
Description	Asymmetrical - Bridge NPT IGBT Power Module
Datasheet	APTGF50DH60T1G Datasheet
Additional preview pages of the APTGF50DH60T1G datasheet.

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Other Datasheets by Microsemi Corporation

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APTGF50DH60T1G Asymmetrical - Bridge NPT IGBT Power Module VCES = 600V IC = 50A* @ Tc = 80°C www.DataSheet4U.

Published: Apr 1, 2010 |