APTGT200DH120G - Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module

Microsemi Corporation

Datasheet Details

Part number	APTGT200DH120G
Manufacturer	Microsemi Corporation
File Size	283.51 KB
Description	Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module
Datasheet	APTGT200DH120G_MicrosemiCorporation.pdf

Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated.
Kelvin emitter for easy drive.
Very low stray inductance - Symmetrical design - M5 power connectors.
High level of integration Benefits.
Stable temperature behavior.
Very rugged.
Direct mounting to heat.

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Published: May 26, 2009 |