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APTGT200DH60G

APTGT200DH60G is Asymmetrical - Bridge Trench Field Stop IGBT Power Module manufactured by Microsemi.
APTGT200DH60G datasheet preview

APTGT200DH60G Datasheet

Part number APTGT200DH60G
Download APTGT200DH60G Datasheet (PDF)
File Size 282.75 KB
Manufacturer Microsemi
Description Asymmetrical - Bridge Trench Field Stop IGBT Power Module
APTGT200DH60G page 2 APTGT200DH60G page 3

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APTGT200DH60G Distributor

APTGT200DH60G Description

APTGT200DH60G Asymmetrical - Bridge Trench + Field Stop IGBT® .. Power Module VBUS Q1 G1 CR3 VCES = 600V IC = 200A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives.

APTGT200DH60G Key Features

  • Trench + Field Stop IGBT® Technology
  • Low voltage drop
  • Low tail current
  • Switching frequency up to 20 kHz
  • Soft recovery parallel diodes
  • Low diode VF
  • Low leakage current
  • Avalanche energy rated
  • RBSOA and SCSOA rated
  • Kelvin emitter for easy drive

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