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  Microsemi Electronic Components Datasheet  

APTGT300A170G Datasheet

IGBT Power Module

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APTGT300A170G pdf
APTGT300A170G
Phase leg
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
VCES = 1700V
IC = 300A @ Tc = 80°C
VB US
Q1
G1
E1 OUT
Q2
G2
E2
0/VB US
G1 VBUS
E1
E2
G2
0/VBUS
OUT
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
400
300
600
±20
1660
600A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5


  Microsemi Electronic Components Datasheet  

APTGT300A170G Datasheet

IGBT Power Module

No Preview Available !

APTGT300A170G pdf
APTGT300A170G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
www.dataIsChEeSet4u.cZoemro Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1700V
750 µA
VGE = 15V
IC = 300A
Tj = 25°C
Tj = 125°C
2.0 2.4
2.4
V
VGE = VCE , IC = 5mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
26.5
1.1 nF
0.88
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 300A
RG = 2.2
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 300A
RG = 2.2
VGE = 15V
VBus = 900V
IC = 300A
RG = 2.2
Tj = 125°C
Tj = 125°C
370
40
650
180
400
50
800
300
96
94
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1700V
Tj = 25°C
Tj = 125°C
1700
750
1000
V
µA
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 300A
IF = 300A
VR = 900V
di/dt =3200A/µs
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300 A
1.8 2.2
1.9
V
385 ns
490
76 µC
124
35 mJ
70
www.microsemi.com
2-5


Part Number APTGT300A170G
Description IGBT Power Module
Maker Microsemi Corporation
Total Page 5 Pages
PDF Download
APTGT300A170G pdf
APTGT300A170G Datasheet PDF
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