APTGT35H120T3G - IGBT Power Module

Microsemi Corporation

Datasheet Details

Part number	APTGT35H120T3G
Manufacturer	Microsemi Corporation
File Size	293.63 KB
Description	IGBT Power Module
Datasheet	APTGT35H120T3G_MicrosemiCorporation.pdf

Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated.
Kelvin emitter for easy drive.
Low stray inductance.
High level of integration.
Internal thermistor for temperature monitoring Benefits.
Outstanding performance at high frequency operation.
Direct mount.

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Published: May 26, 2009 |