APTGT50DH60T1G Datasheet Power-Module IGBT

Manufacturer: Microsemi (now Microchip Technology)

APTGT50DH60T1G power-module igbt by Microsemi (now Microchip Technology) - Datasheet Preview

Datasheet Details

Part number	APTGT50DH60T1G
Manufacturer	Microsemi (now Microchip Technology)
File Size	229.52 KB
Description	Power-Module IGBT
Datasheet	APTGT50DH60T1G Datasheet

Overview

www.DataSheet4U.com APTGT50DH60T1G Asymmetrical - Bridge Trench + Field Stop IGBT Power Module VCES = 600V IC = 50A* @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power.

Key Features

Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated.
Very low stray inductance - Symmetrical design.
Internal thermistor for temperature monitoring.
High level of integration Benefits.
Outstanding performance at high frequency operation.
Direct mounting to heatsink (isolated package).

More Datasheets from Microsemi (now Microchip Technology)

Part Number	Description
APTGT50DH60TG	Power-Module IGBT
APTGT50DH120T3G	Power-Module IGBT
APTGT50DH120TG	Power-Module IGBT
APTGT50DH170TG	Power-Module IGBT
APTGT50DA120TG	Power-Module IGBT
APTGT50DA170TG	Power-Module IGBT
APTGT50DDA120T3G	Power-Module IGBT
APTGT50DDA60T3G	Power-Module IGBT
APTGT50DSK120T3G	Power-Module IGBT
APTGT50DSK60T3G	Power-Module IGBT