GC9981 Datasheet | Microsemi

.Data Sheet.co.kr - GC9989 TM ® Schottky Barrier Diodes Ultra High Drive Monolithic Ro HS pliant DESCRIPTION Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are remended for highest frequency, broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi’s plete line of barrier heights. Diodes are available with barrier heights ranging from 600 m V to 1300 m V per leg. By optimizing epitaxy and metallization, these devices achieve lowest Rs-Cj products resulting in exceptional conversion loss performance. “High Rel” screening is available on packaged devices per your requirements. This series of devices meets Ro HS requirements per EU Directive 2002/95/EC. KEY Features - Monolithic Design for Lowest Parasitics and Matched Junction Characteristics - Low Noise Figure - Suitable for Applications to 26.5 GHz - Excellent Conversion Loss - Available High and Ultra-High Barrier Heights - Can be Supplied as Monolithic Devices for Hybrid Applications or as Packaged Devices - Ro HS pliant1 These devices are supplied with Gold plated terminations. Consult factory for details. .MICROSEMI. APPLICATIONS Schottky Barrier diodes are suitable for a variety of circuit applications ranging from double balanced RF mixers to high speed switching and modulation. The monolithic beamlead design minimizes parasitic inductance and capacitance insuring repeatable performance through Ka band. With junction capacitances as low as 0.06 p F. Monolithic 8 junction quads are ideally suited...