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GC9988 - Schottky Barrier Diodes

Download the GC9988 datasheet PDF. This datasheet also covers the GC9981 variant, as both devices belong to the same schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.

Description

Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration.

Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages.

Monolithic devices are recommended for highest frequency, broadband designs.

Features

  • Monolithic Design for Lowest Parasitics and Matched Junction Characteristics.
  • Low Noise Figure.
  • Suitable for.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GC9981_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
GC9901 Schottky Barrier Diodes MICROSEMI
GC9902 Schottky Barrier Diodes MICROSEMI
GC9903 Schottky Barrier Diodes MICROSEMI
GC9904 Schottky Barrier Diodes MICROSEMI
GC9911 Schottky Barrier Diodes MICROSEMI

Other Datasheets by Microsemi (Microchip)

Part Number Description
GC9981 Schottky Barrier Diodes
GC9982 Schottky Barrier Diodes
GC9983 Schottky Barrier Diodes
GC9984 Schottky Barrier Diodes
GC9985 Schottky Barrier Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr GC9981 – GC9989 TM ® Schottky Barrier Diodes Ultra High Drive Monolithic RoHS Compliant DESCRIPTION Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi’s complete line of barrier heights.