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  Microsemi Electronic Components Datasheet  

GC9989 Datasheet

(GC9981 - GC9989) Schottky Barrier Diodes

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TM
®
DESCRIPTION
Microsemi’s Schottky Barrier devices are currently available in the eight
junction ring quad configuration. Devices are available in monolithic form for
hybrid applications as well as in hermetic or non-hermetic packages.
Monolithic devices are recommended for highest frequency, broadband
designs. The beamlead design eliminates the problems associated with wire
bonding very small junction devices thus improving reliability and
performance in MIC applications. Our in house epitaxy process capability
insures repeatability for lowest conversion loss through Ku Band. A broad
range of unique metallization schemes produce Microsemi’s complete line of
barrier heights. Diodes are available with barrier heights ranging from 600 mV
to 1300 mV per leg. By optimizing epitaxy and metallization, these devices
achieve lowest Rs-Cj products resulting in exceptional conversion loss
performance. “High Rel” screening is available on packaged devices per your
requirements.
This series of devices meets RoHS requirements per EU Directive
2002/95/EC.
APPLICATIONS
Schottky Barrier diodes are suitable for a variety of circuit applications
ranging from double balanced RF mixers to high speed switching and
modulation. The monolithic beamlead design minimizes parasitic inductance
and capacitance insuring repeatable performance through Ka band. With
junction capacitances as low as 0.06 pF. Monolithic 8 junction quads are
ideally suited for broad band high drive mixers through 26.5 GHz.
Ultra-High barrier diodes, (GC9980 Series) are designed for applications
where high drive levels are available, such as, Doppler mixers or motion
detection. Microsemi also has Schottky diodes available in Ultra-Low,
Medium and High Drive levels to fit virtually any circuit requirement.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Maximum Power Handling
P
100
Storage Temperature
TSTG
-65 to +175
Operating Temperature
TOP -65 to +150
Unit
mW
ºC
ºC
IMPORTANT:
For the most current data, consult our web site: www.microsemi.com
Specifications are subject to change, consult the factory for further information.
These devices are ESD sensitive and must be handled use using ESD precautions.
GC9981 – GC9989
Schottky Barrier Diodes
Ultra High Drive Monolithic
RoHS Compliant
KEY FEATURES
Monolithic Design for Lowest
Parasitics and Matched Junction
Characteristics
Low Noise Figure
Suitable for Applications to 26.5
GHz
Excellent Conversion Loss
Available High and Ultra-High
Barrier Heights
Can be Supplied as Monolithic
Devices for Hybrid Applications or
as Packaged Devices
RoHS Compliant1
1 These devices are supplied with Gold
plated terminations. Consult factory for
details.
APPLICATIONS/BENEFITS
RF Mixers
Double Balanced Mixers
High Speed Switching
Motion Detection
Phase Detectors
Copyright 2007
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
Datasheet pdf - http://www.DataSheet4U.net/


  Microsemi Electronic Components Datasheet  

GC9989 Datasheet

(GC9981 - GC9989) Schottky Barrier Diodes

No Preview Available !

www.DataSheet.co.kr
TM
GC9981 – GC9989
Schottky Barrier Diodes
® Ultra High Drive Monolithic
RoHS Compliant
.
CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Model1
Number
Barrier
Height
Freq
Range
VB(V) 2
IR=10μA
(Min)
CJ(pF)3
@0V
(Max)
VF(mV)
@1 mA
(Max)
RD()
@10 mA
(Max)
N(dFbS)S4B
(Typ)
GC9981
GC9982
GC9983
VERY
HIGH
Ku-Ka
X
C
4.0
0.08 800
0.12 780
0.15 750
25
20
15
7
6.5
6.5
GC9984
GC9985
GC9986
EXTRA
HIGH
Ku-Ka
X
C
5.0
0.08 1050
0.12 1000
0.15 950
25
20
15
7
6.5
6.5
GC9987
GC9988
GC9989
ULTRA
HIGH
Ku-Ka
X
C
6.0
0.08 1300
0.12 1250
0.15 1200
25
20
15
7
6.5
6.5
Notes
1. When ordering, specify appropriate package style.
IE: Order GC9981-8JR for Monolithic 8 Junction Ring Quad.
2. VB measured at 10µA on a sample basis only for ring quads.
3. 0 Volts, F=1 MHz (diagonal leads on quads).
4. L.O. = 0 dBm, Nif = 1.5 dB, F = 10 GHz or 3 GHz
PACKAGE STYLE 8JR
PACKAGE STYLE 8JB
PACKAGE STYLE 129C
PACKAGE STYLE 174C
Copyright 2007
Rev: 2009-01-19
MORE PACKAGE STYLE AVAILABLE ON REQUEST
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
Datasheet pdf - http://www.DataSheet4U.net/


Part Number GC9989
Description (GC9981 - GC9989) Schottky Barrier Diodes
Maker Microsemi Corporation
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GC9989 Datasheet PDF






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