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GC9989 - Schottky Barrier Diodes

This page provides the datasheet information for the GC9989, a member of the GC9981 Schottky Barrier Diodes family.

Datasheet Summary

Description

Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration.

Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages.

Monolithic devices are recommended for highest frequency, broadband designs.

Features

  • Monolithic Design for Lowest Parasitics and Matched Junction Characteristics.
  • Low Noise Figure.
  • Suitable for.

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Datasheet preview – GC9989

Datasheet Details

Part number GC9989
Manufacturer Microsemi Corporation
File Size 192.72 KB
Description Schottky Barrier Diodes
Datasheet download datasheet GC9989 Datasheet
Additional preview pages of the GC9989 datasheet.
Other Datasheets by Microsemi Corporation

Full PDF Text Transcription

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www.DataSheet.co.kr GC9981 – GC9989 TM ® Schottky Barrier Diodes Ultra High Drive Monolithic RoHS Compliant DESCRIPTION Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi’s complete line of barrier heights.
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