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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225 Devices
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Qualified Level 2N1890 JAN JANTX
2N1711
MAXIMUM RATINGS Ratings
Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCBO VEBO IC PT TJ, Tstg Symbol ZθJX
2N1711
75
2N1890
100
Unit
Vdc Vdc mAdc W W 0 C Unit C/W
@ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range
7.0 500 0.8 3.0 -65 to +200 Max. 58
THERMAL CHARACTERISTICS
Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C
0
TO-5*
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max.
JAN2N1711 Datasheet
