MRF544 transistors equivalent, rf & microwave discrete low power transistors.
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* Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz High Collector Base .
requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Co.
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parame.
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