MS2213 Datasheet | Microsemi

Features - - - - - - - - REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 7.8 d B Gain DESCRIPTION : The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF thermal resistance and puterized automatic wire bonding techniques ensure high reliability and product consistency. The MS2213 is supplied in the hermetic metal/ceramic package with internal input matching structures. . Data Shee ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol PDISS IC VCC TJ TSTG Power Dissipation - (TC ≤ 85° C) Device Current - Collector - Supply Voltage - Junction Temperature (Pulsed RF Operation) Storage Temperature Parameter Value 75 3.5 40 250 - 65 to + 200 Unit W A V °C °C Thermal Data RTH(j-c) . Junction-Case Thermal Resistance ° C/W - Applies only to rated RF amplifier operation MSC0920.PDF 9-23-98 Data Sheet 4 U . .. STATIC ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° C) Symbol BVCBO BVEBO BVCER Test Conditions Min. IC = 10 m A IE = 1 m A IC = 20 m A VCE = 35 V VCE = 5V RBE =10Ω IC = 1.0 A 55 3.5 55...