MS2213 applications equivalent, rf & microwave transistors speciality avionics/jtids applications.
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* REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING .
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* REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR.
The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstan.
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