MSAFX10N90A Description
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX. Electrical Parameters @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current...
MSAFX10N90A Key Features
- Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Her
- Very low thermal resistance
- Reverse polarity available upon request