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MSAGX75F60A Datasheet N-channel Insulated Gate Bipolar Transistor

Manufacturer: Microsemi (now Microchip Technology)

Overview: .. 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX75F60A 600 Volts 75 Amps 2.

General Description

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg θJC MAX.

600 600 +/-20 +/-30 75 50 200 100 300 -55 to +150 -55 to +150 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C °C/W Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C Tj= 90°C Peak Collector Current, pulse width limited by Tjmax, Safe Operating Area (RBSOA) @ VGE= 15V, L= 30 µH (clamped inductive load), R G= 2.7Ω, Tj= 125°C, VCE= 0.8 x V CES Power Dissipation Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case Mechanical Outline COLLECTOR EMITTER GATE Datasheet# MSC0272B ..

MSAGX75F60A Electrical Parameters @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage Gate-to-Emitter Leakage Current Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance INDUCTIVE LOAD, Tj= 25° C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off Energy INDUCTIVE LOAD, Tj= 125° C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off En

Key Features

  • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAGX75F60B high frequency IGBT, low switching losses Maximum Ratings @ 25° C (unless otherwise specified).

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