MSAGX60F60A
MSAHX60F60Awww.DataSheet4U.com
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
Collector-to-Emitter Saturation Voltage (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
INDUCTIVE LOAD, Tj= 25°C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Off Energy
INDUCTIVE LOAD, Tj= 125°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Antiparallel diode forward voltage (MSAHX60F60A
only)
Antiparallel diode reverse recovery time
(MSAHX60F60A only)
Antiparallel diode reverse recovery charge
(MSAHX60F60A only)
Antiparallel diode peak recovery current
(MSAHX60F60A only)
SYMBOL
BVCES
VGE(th)
IGES
ICES
VCE(sat)
gfs
Cies
Coes
Cres
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Qg
Qge
Qgc
VF
trr
Qrr
IRM
CONDITIONS
VGS = 0 V, IC = 250 µA
VCE = VGE, IC = 250 µA
VGE = ± 20VDC, VCE = 0
VCE =0.8•BVCES
VGE = 0 V
VGE= 15V, IC= 30A
IC= 60A
IC= 30A
VCE ≥ 10 V; IC = 30 A
TJ = 25°C
T J = 125°C
TJ = 25°C
T J = 125°C
T J = 25°C
T J = 25°C
T J = 125°C
VGE = 0 V, VCE = 25 V, f = 1 MHz
VGE = 15 V, VCE = 480 V,
IC = 30 A, RG = 4.7 Ω,
L= 100 µH note 2, 3
VGE = 15 V, VCE = 480 V,
IC = 30 A, RG = 4.7 Ω,
L= 100 µH note 2, 3
VGE = 15 V, VCE = 300V, IC = 30A
IE= 15 A
T J = 25 °C
IE= 15 A
T J = 150 °C
IE= 30 A
T J = 25 °C
IE= 50 A
T J = 25 °C
IE= 10 A, dIE/dt= 100 A/us, T J= 25°C
IE= 30 A, dIE/dt= 100 A/us, T J= 25°C
IE= 10 A, dIE/dt= 100 A/us, T J= 25°C
IE= 30 A, dIE/dt= 100 A/us, T J= 25°C
IE= 10 A, dIE/dt= 100 A/us, T J= 25°C
IE= 30 A, dIE/dt= 100 A/us, T J= 25°C
MIN TYP.
600
2.5
2.2
3.5
2.2
15 20
2500
230
70
25
30
175
125
1.3
25
35
1
250
260
4
125
23
50
1.7
1.9
140
160
320
3
4.2
MAX UNIT
V
5.0
±100
±200
200
1000
2.9
V
nA
µA
V
S
pF
ns
ns
ns
175 ns
mJ
ns
ns
mJ
ns
ns
mJ
150 nC
35
75
1.5 V
1.3 V
V
V
100 ns
ns
nC
nC
A
A
Notes
(1) Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%
(2) switching times and losses may increase for larger V CE and/or RG values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.
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