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  Microsemi Electronic Components Datasheet  

MSAHX60F60A Datasheet

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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MSAHX60F60A pdf
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2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAGX60F60A
MSAHX60F60A
Features
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: MSAH(G)60F60B
high frequency IGBT, low switching losses
anti-parallel FREDiode (MSAHX60F60A only)
600 Volts
60 Amps
2.9 Volts vce(sat)
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ 25°C
Collector-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
90°C
Tj= 25°C
Tj=
Peak Collector Current, pulse width limited by Tjmax,
Safe Operating Area (RBSOA) @ VGE= 15V, L= 100µH (clamped inductive
load), RG= 4.7, Tj= 125°C, VCE= 0.8 x VCES
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, MSAHX60F60A only)
Pulse Source Current (Body Diode, MSAHX60F60A only)
Thermal Resistance, Junction to Case
BVCES
BVCGR
VGES
VGEM
IC25
IC90
ICM
Imax
PD
Tj
Tstg
IS
ISM
θJC
Mechanical Outline
MAX.
600
600
+/-20
+/-30
60
32
120
64
300
-55 to +150
-55 to +150
32
100
0.4
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
Watts
°C
°C
Amps
Amps
°C/W
COLLECTOR
EMITTER
(MS…A)
GATE (MS…B)
.A)
EMITTER (MS…B)
Datasheet# MSC0298A


  Microsemi Electronic Components Datasheet  

MSAHX60F60A Datasheet

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

MSAHX60F60A pdf
MSAGX60F60A
MSAHX60F60Awww.DataSheet4U.com
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
Collector-to-Emitter Saturation Voltage (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
INDUCTIVE LOAD, Tj= 25°C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Off Energy
INDUCTIVE LOAD, Tj= 125°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Antiparallel diode forward voltage (MSAHX60F60A
only)
Antiparallel diode reverse recovery time
(MSAHX60F60A only)
Antiparallel diode reverse recovery charge
(MSAHX60F60A only)
Antiparallel diode peak recovery current
(MSAHX60F60A only)
SYMBOL
BVCES
VGE(th)
IGES
ICES
VCE(sat)
gfs
Cies
Coes
Cres
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Qg
Qge
Qgc
VF
trr
Qrr
IRM
CONDITIONS
VGS = 0 V, IC = 250 µA
VCE = VGE, IC = 250 µA
VGE = ± 20VDC, VCE = 0
VCE =0.8BVCES
VGE = 0 V
VGE= 15V, IC= 30A
IC= 60A
IC= 30A
VCE 10 V; IC = 30 A
TJ = 25°C
T J = 125°C
TJ = 25°C
T J = 125°C
T J = 25°C
T J = 25°C
T J = 125°C
VGE = 0 V, VCE = 25 V, f = 1 MHz
VGE = 15 V, VCE = 480 V,
IC = 30 A, RG = 4.7 ,
L= 100 µH note 2, 3
VGE = 15 V, VCE = 480 V,
IC = 30 A, RG = 4.7 ,
L= 100 µH note 2, 3
VGE = 15 V, VCE = 300V, IC = 30A
IE= 15 A
T J = 25 °C
IE= 15 A
T J = 150 °C
IE= 30 A
T J = 25 °C
IE= 50 A
T J = 25 °C
IE= 10 A, dIE/dt= 100 A/us, T J= 25°C
IE= 30 A, dIE/dt= 100 A/us, T J= 25°C
IE= 10 A, dIE/dt= 100 A/us, T J= 25°C
IE= 30 A, dIE/dt= 100 A/us, T J= 25°C
IE= 10 A, dIE/dt= 100 A/us, T J= 25°C
IE= 30 A, dIE/dt= 100 A/us, T J= 25°C
MIN TYP.
600
2.5
2.2
3.5
2.2
15 20
2500
230
70
25
30
175
125
1.3
25
35
1
250
260
4
125
23
50
1.7
1.9
140
160
320
3
4.2
MAX UNIT
V
5.0
±100
±200
200
1000
2.9
V
nA
µA
V
S
pF
ns
ns
ns
175 ns
mJ
ns
ns
mJ
ns
ns
mJ
150 nC
35
75
1.5 V
1.3 V
V
V
100 ns
ns
nC
nC
A
A
Notes
(1) Pulse test, t 300 µs, duty cycle δ ≤ 2%
(2) switching times and losses may increase for larger V CE and/or RG values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.


Part Number MSAHX60F60A
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Maker Microsemi Corporation
Total Page 2 Pages
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