MSAGZ52F120Awww.DataSheet4U.com
MSAHZ52F120A
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
Collector-to-Emitter Saturation Voltage (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
INDUCTIVE LOAD, Tj= 125°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
INDUCTIVE LOAD, Tj= 125°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Antiparallel diode forward voltage (MSAHZ52F120A
only)
Antiparallel diode reverse recovery time
(MSAHZ52F120A only)
Antiparallel diode reverse recovery charge
(MSAHZ52F120A only)
Antiparallel diode peak recovery current
(MSAHZ52F120A only)
SYMBOL
BVCES
VGE(th)
IGES
ICES
VCE(sat)
gfs
Cies
Coes
Cres
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Qg
Qge
Qgc
VF
trr
Qrr
IRM
CONDITIONS
VGS = 0 V, IC = 250 µA
VCE = VGE, IC = 350 µA
VGE = ± 20VDC, VCE = 0
VCE =0.8•BVCES
VGE = 0 V
VGE= 15V, IC= 25A
IC= 25A
IC= 60A
IC= 30A
VCE = 20 V; IC = 25 A
TJ = 25°C
T J = 125°C
TJ = 25°C
T J = 125°C
T J = 25°C
T J = 125°C
T J = 25°C
T J = 125°C
VGE = 0 V, VCE = 25 V, f = 1 MHz
VGE = 15 V, VCE = 600 V,
IC = 25 A, RG = 47 Ω,
L= 100 µH note 2, 3
VGE = 15 V, VCE = 600 V,
IC = 50 A, RG = 47 Ω,
L= 100 µH note 2, 3
VGE = 15 V, VCE = 600V, IC = 25A
IE= 10 A
T J = 25 °C
IE= 10 A
T J = 100 °C
IE= 10 A, dIE/dt= 100 A/us, T J= 25°C
IE= 10 A, dIE/dt= 800 A/us, T J= 125°C
IE= 10 A, dIE/dt= 100 A/us, T J= 25°C
IE= 10 A, dIE/dt= 800 A/us, T J= 125°C
IE= 10 A, dIE/dt= 100 A/us, T J= 25°C
IE= 10 A, dIE/dt= 800 A/us, T J= 125°C
MIN TYP.
1200
4.5 5.5
2.7
3.3
3.4
4.3
8.5 20
1650
250
110
75
65
3.6
420
45
2.4
95
90
10
420
45
4.2
160
20
75
2.4
2
60
800
22
MAX UNIT
V
6.5
±100
±200
250
1000
3.2
3.9
V
nA
µA
V
2200
380
160
110
100
560
60
S
pF
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
nC
3
TBD
TBD
TBD
V
V
ns
ns
nC
nC
A
A
Notes
(1) Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%
(2) switching times and losses may increase for larger V CE and/or RG values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.
