• Part: 1N5811C
  • Description: Superfast Rectifier Diode
  • Category: Diode
  • Manufacturer: Micross
  • Size: 148.68 KB
Download 1N5811C Datasheet PDF
Micross
1N5811C
1N5811C is Superfast Rectifier Diode manufactured by Micross.
Features VR = 150V IR = 5.0µA trr = 30ns VF = 0.875V at IF = 4.0A 1N5811C 150V Axial Leaded Superfast Rectifier Diode Quick Reference Data ‹ Low reverse leakage current ‹ Very low reverse recovery time ‹ Hermetically sealed ‹ Good thermal shock resistance ‹ Low forward voltage drop Absolute Maximum Ratings Electrical specifications @ TA = 25o C unless otherwise specified. Parameter Symbol Maximum Reccurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC blocking Voltage VRRM VRMS Vdc Maximum Average Forward Rectified Current 3/8”lead length at TA=-75o C IFAV Peak Forward Surge Current 8.3ms single Half sinewave IFSM superimposed on rated load Maximum Instantaneous Forward Voltage at 4.0A Matarxaitmedum DCDb Clo Rcekvienrgsevo Clutarrgeen Tt ATA=1=0205oo CC Maximum Reverse Recovery Time(1) trr Typical Thermal Resistance(2) RθJL Storage and Operating Juntion Temperature TSTG, TJ Note: 1. Reverse Recovery Condition IF =1.0A, IR =1.0A, IRR =0.1A 2. Thermal Resistance from Junction to Ambient at 3/8”lead length. 150 112 150 6.0 0.875 5.0 150 30 35.5 -65 to +175 Units V μA ns o C/W o C 1N5811C Final Datasheet 20/12/2017 Rev 2.0 .wse.mtiecrcohs.cso.cmom 1 of 4 Average forward rectified current Amperes Rating and Characteristic Curves Peak forward surge current ,...