1N5811C
1N5811C is Superfast Rectifier Diode manufactured by Micross.
Features
VR = 150V IR = 5.0µA trr = 30ns VF = 0.875V at IF = 4.0A
1N5811C 150V Axial Leaded Superfast Rectifier Diode
Quick Reference Data
Low reverse leakage current Very low reverse recovery time Hermetically sealed Good thermal shock resistance Low forward voltage drop
Absolute Maximum Ratings
Electrical specifications @ TA = 25o C unless otherwise specified.
Parameter
Symbol
Maximum Reccurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC blocking Voltage
VRRM VRMS Vdc
Maximum Average Forward Rectified Current 3/8”lead length at TA=-75o C
IFAV
Peak Forward Surge Current 8.3ms single Half sinewave
IFSM superimposed on rated load
Maximum Instantaneous Forward Voltage at 4.0A
Matarxaitmedum DCDb Clo Rcekvienrgsevo Clutarrgeen Tt ATA=1=0205oo CC
Maximum Reverse Recovery Time(1) trr
Typical Thermal Resistance(2)
RθJL
Storage and Operating Juntion Temperature
TSTG, TJ
Note:
1. Reverse Recovery Condition IF =1.0A, IR =1.0A, IRR =0.1A 2. Thermal Resistance from Junction to Ambient at 3/8”lead length.
150 112 150 6.0
0.875 5.0 150 30 35.5
-65 to +175
Units
V μA ns o C/W o C
1N5811C Final Datasheet 20/12/2017
Rev 2.0
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Average forward rectified current Amperes
Rating and Characteristic Curves
Peak forward surge current ,...