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3N191. For precise diagrams, and layout, please refer to the original PDF.
3N191 P-CHANNEL MOSFET The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 1...
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ECT REPLACEMENT FOR INTERSIL 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF The hermetically sealed TO-78 package is well suited ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) for high reliability and harsh environment applications. Maximum Temperatures Storage Temperature ‐65°C to +150°C (See Packaging Information).
3N191 Datasheet
