Name: ASJD1200R085
SKU: ASJD1200R085-1095330

The ASJD1200R085 by Micross is a Normally-ON Trench Silicon Carbide Power JFET. Below is the official datasheet preview.

Datasheet Details

Part number	ASJD1200R085
Manufacturer	Micross
File Size	227.35 KB
Description	Normally-ON Trench Silicon Carbide Power JFET
Datasheet	ASJD1200R085-Micross.pdf
Additional preview pages of the ASJD1200R085 datasheet.

ASJD1200R085 Product details

Die Inside.
Hermetic TO-258 Packaging.
200°C Maximum Operating Temperature (260oC Contact Factory).
Available Screening: - MIL-PRF-19500 Equivalent - Space Level - MIL-STD-750 Methods & Conditions.
Inherent Radiation Tolerance >100K TID.
Positive Temperature Coefﬁcient for Ease of Paralleling.
Extremely Fast Switching with No “Tail” Current at 150°C.
1200 Volt Drain-Source Blocking Voltage.
RDS(on)max of 0.085 .