J202 Datasheet | Micross

J202 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J202 The J202 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). Features   DIRECT REPLACEMENT FOR SILICONIX J202  LOW CUT OFF VOLTAGE  VGS(off) ≤ 1.5  HIGH GAIN  AV = 80 V/V  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Forward Gate Current (Note 1)  MAXIMUM VOLTAGES  Gate to Drain Voltage  Gate to Source Voltage    ‐65°C to +150°C  ‐55°C to +135°C  350m W  50m A  VGDS = ‐40V  VGSS = ‐40V    .. J202 Benefits: - - - - - - High Input Impedance Low Cutoff Voltage Low Noise Battery powered amplifiers Audio Pre-Amplifiers Infra-Red Detector Amplifiers J202 Applications:     J202 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  BVGSS  Gate to Source Breakdown Voltage  ‐40  VGS(off)  Gate to Source Cutoff Voltage  ‐0.8  IDSS  Drain to Source Saturation Current (Note 2)  0.9  IGSS  Gate Reverse Current  ‐2  IG  Gate Operating Current  ‐‐  ID(off)  Drain Cutoff Current  ‐‐  gfs  Forward Transconductance  1  Ciss  Input Capacitance  ‐‐  Crss  Reverse Transfer Capacitance  ‐‐  en  Equivalent Noise Voltage  ‐‐  Click To Buy   V  m A    p A  m S  p F  n V/√Hz  Available Packages: J202 in TO-92 J202 in bare die. Please contact Micross for full package and die dimensions TO-92 (Bottom View) TYP.  ‐‐  ‐‐  ‐‐  ‐‐  ‐2   2  ‐‐  4.5  1.3  6  MAX  ‐‐  ‐4  4.5  ‐100  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  UNITS  CONDITIONS  IG = 1µA,   VDS = 0V  VDS = 15V, ID = 10n A  VDS = 15V,  VGS = 0V  VGS = ‐20V,  VDS = 0V  VDG = 10V,  ID = 0.1m A  VDS = 15V, VGS = ‐5V  VDS = 15V,   VGS = 0V , f = 1k Hz ...