SSTDPAD100
SSTDPAD100 is Dual Low Leakage manufactured by Micross.
features a leakage current of -100 p A and is well suited for use in applications such as input protection for operational amplifiers. FEATURES
DIRECT REPLACEMENT FOR SILICONIX SSTDPAD100 HIGH ON ISOLATION EXCELLENT CAPACITANCE MATCHING ULTRALOW LEAKAGE REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Current (Note 1)
20f A ∆CR ≤ 0.5p F ≤ 100 p A BVR ≥ ‐30V Crss ≤ 4.0p F
SSTDPAD100 Benefits:
- -
- Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation
‐65°C to +150°C ‐55°C to +135°C 500m W 50m A
SSTDPAD100 Applications:
- - Op Amp Input Protection Multiplexer Overvoltage Protection
SSTDPAD100 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. BVR Reverse Breakdown Voltage ‐30 ‐‐ ‐‐ VF Forward Voltage ‐‐ 0.8 1.5 Cr SS Total Reverse Capacitance ‐‐ ‐‐ 4.0 |CR1‐CR2| Differential Capacitance (∆CR) ‐‐ ‐‐ 0.5 IR Maximum Reverse Leakage Current ‐‐ ‐‐ ‐100
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UNITS V V p F p F p A SOIC (Top View)
CONDITIONS IR = ‐1µA IF = 1m A VR = ‐5V, f = 1MHz VR1 = VR2 = ‐5V, f = 1MHz VR = ‐ 20V
Notes: 1. Absolute maximum ratings are limiting values above which SSTDPAD100 serviceability may be impaired.
Available Packages: SSTDPAD100 in SOIC SSTDPAD100 available as bare die Please contact Micross for full package and die dimensions
Micross ponents Europe Tel: +44 1603 788967 Email: chipponents@micross. Web: http://.micross./distribution.
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