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ICE20N170 Datasheet N-Channel MOSFET

Manufacturer: Micross

Overview: ICE20N170 N-Channel Enhancement Mode MOSFET.

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General Description

: TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 20 62 520 20 50 ±20 ±30 180 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 10A Limited by Tjmax VDS = 480V, ID = 20A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 2.5 screws Max Min Typ Typ D S Symbol Parameter Values Min Typ Max Unit Conditions Thermal Characteristics RthJC Thermal Resistance, Junction to Case RthJA Thermal Resistance, Junction to Ambient Tsold Soldering Temperature, Wave Soldering Only Allowed At Leads - Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS VGS(th) IDSS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current 600 2.1 - IGSS RDS(on) Gate Source Leakage Current Drain to Source On-State Resistance - RGS Gate Resistance - - 0.7 - 62 - 260 640 3 3.9 0.1 1 - 100 - 100 0.17 0.199 0.52 4.3 - °C/W °C Leaded 1.6mm (0.063in.) from Case for 10s V VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA µA VDS = 600V, VGS = 0V, Tj = 25°C VDS = 600V, VGS = 0V, Tj = 150°C nA VGS = ±20v, VDS = 0V Ω VGS = 10V, ID = 10A, Tj = 25°C VGS = 10V, ID = 10A, Tj = 150°C Ω f = 1 MHz, open drain Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, W

Key Features

  • r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 20A 600V 0.17Ω 62nC Pin.

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