ICE60N800D mosfet equivalent, n-channel mosfet.
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconduc.
TO-252
G
Max Min Typ Typ
D
S
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse EAS IAR
dv/dt
Continous Drain Current
Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness
VGS
Ptot Tj, Ts.
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