• Part: ICE7N60FP
  • Manufacturer: Micross
  • Size: 786.99 KB
Download ICE7N60FP Datasheet PDF
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ICE7N60FP Description

TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt.

ICE7N60FP Key Features

  • 55 to +150 60
  • 260 lowed At Leads
  • 0.52 0.60
  • RGS Gate Resistance
  • 365 -6-7-6- 3.5
  • nC VDS = 480V, ID = 7A, VGS = 0 to 10V
  • 0.9 1.2
  • V VGS = 0V, IS = IF ns