30MPA0562 Datasheet | Mimix Broadband

28.0-31.0 GHz Ga As MMIC Power Amplifier August 2005 - Rev 04-Aug-05 30MPA0562 Chip Device Layout Features Ka-Band 1 W Power Amplifier 27.0 d B Small Signal Gain +30.0 d Bm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband's three stage 28.0-31.0 GHz Ga As MMIC power amplifier has a small signal gain of 27.0 d B with +30.0 d Bm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Pointto-Point Radio, LMDS, SAT and VSAT applications. uc Units GHz d B d B d B d B d B d Bm VDC VDC m A m A m A Min. 28.0 -1.0 -...