XF1001-SC - HFET

Description

The XF1001-SC is a high linearity Hetrojunction Field Effect Transistor (HFET) housed in an industry standard SOT-89 package.

Optimum performance is achieved when the device is biased at a drain voltage of 8V and drain current of 300m.

Features

46.5 dBm OIP3 @ 5.8 GHz 15.5 dB Gain @ 2 GHz 10.0 dB Gain @ 6 GHz 30.0 dBm P1dB SOT-89 Package General.

Mimix Broadband

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Datasheet Details

Part number	XF1001-SC
Manufacturer	Mimix Broadband
File Size	364.33 KB
Description	HFET
Datasheet	XF1001-SC Datasheet
Additional preview pages of the XF1001-SC datasheet.

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DC-6.0 GHz 1.0W Packaged HFET April 2010 - Rev 05-Apr-10 Features 46.5 dBm OIP3 @ 5.8 GHz 15.5 dB Gain @ 2 GHz 10.0 dB Gain @ 6 GHz 30.0 dBm P1dB SOT-89 Package General Description The XF1001-SC is a high linearity Hetrojunction Field Effect Transistor (HFET) housed in an industry standard SOT-89 package. Optimum performance is achieved when the device is biased at a drain voltage of 8V and drain current of 300m. At this bias point, the device is capable of more than 30 dBm of P1dB and OIP3 of more than 46 dBm. The XF1001-SC is suitable for applications up to 6 GHz where it has 10 dB of gain. Typical Performance: 8V, 25 ºC Parameter Typical Units Frequency (F) 1900 Gain (S21) 15.5 Ourput IP3 (OIP3) 46.5 Output P1dB 30.0 Quiescent Current (Idq) 300 Input Return Loss (S11) -12.

Published: Apr 19, 2016 |