Datasheet4U Logo Datasheet4U.com

M54532FP - 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY

Description

M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Features

  • High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 1.5A) With clamping diodes Wide operating temperature range (Ta =.
  • 20 to +75°C) OUTPUT2 O2← 7 COMMON COM 8 16P4(P) Package type 16P2N-A(FP) NC : No connection.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITSUBISHI SEMICONDUCTOR M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION COMMON COM 1 16 NC OUTPUT1 O1← 2 INPUT1 IN1→ 3 15 →O4 OUTPUT4 14 ←IN4 INPUT4 13  12   4 GND   5 INPUT2 IN2→ 6  GND 11 ←IN3 INPUT3 10 →O3 OUTPUT3 9 NC FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 1.
Published: |