M5K4164AL-15
Description
This is a family of 65536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation.
Key Features
- 16 pin zigzag inline package
- Single 5V±1 0% supply
- Low standby power dissipation: 22mW (max)
- Unlatched output enables two-dimensional chip selection a nd extended page boundary
- Early-write operation gives mon I/O capability
- Read-modify-write, RAS-only refresh, and page-mode capabilities Outline 16P5A
- All input terminals have low input capaciatance and are directly TTL-compatible
- Output is three-state and directly TTL-compatible
- 128 refresh cycles every 2ms (16K dynamic RAMs M5K4116P, S compatible)
- CAS controlled output allows hidden refresh
