Datasheet Details
| Part number | M5M4257L-20 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 1.07 MB |
| Description | 256K-Bit DRAM |
| Download | M5M4257L-20 Download (PDF) |
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Download the M5M4257L-20 datasheet PDF. This datasheet also includes the M5M4257L-12 variant, as both parts are published together in a single manufacturer document.
| Part number | M5M4257L-20 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 1.07 MB |
| Description | 256K-Bit DRAM |
| Download | M5M4257L-20 Download (PDF) |
|
|
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This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation_ Multiplexed address inputs permit both a reduction in pins to the 16 pin zigzag inline package configuration and an increase in system densities_ In addition to the RAS only refresh mode, the Hidden refresh mode and CAS before RAS refresh mode are available_
MITSUBISHI LSls M5M4257L.12, ·15, ·20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC.
| Part Number | Description |
|---|---|
| M5M4257L-12 | 256K-Bit DRAM |
| M5M4257L-15 | 256K-Bit DRAM |
| M5M4257P-12 | 256K-Bit DRAM |
| M5M4257P-15 | 256K-Bit DRAM |
| M5M4257P-20 | 256K-Bit DRAM |
| M5M4257S-12 | 256K-Bit DRAM |
| M5M4257S-15 | 256K-Bit DRAM |
| M5M4257S-20 | 256K-Bit DRAM |
| M5M4256L-12 | 256K-Bit DRAM |
| M5M4256L-15 | 256K-Bit DRAM |