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M5M4257P-20 Datasheet 256K-Bit DRAM

Manufacturer: Mitsubishi Electric

Download the M5M4257P-20 datasheet PDF. This datasheet also includes the M5M4257P-12 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (M5M4257P-12-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

General Description

This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.

The use of double-layer polysi licon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation.

Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities.

Overview

MITSUBISHI LSls M5M4257P-12, -15, -20 262 144·BIT (262 144·WORD BY I.

Key Features

  • Type name Access time (max) (ns) Cycle time (min) (ns) Power dissipation (typ) (mW) M5M4257P-12 120 230 260 M5M4257P -1.

More Datasheets from Mitsubishi Electric

Part Number Description
M5M4257P-12 256K-Bit DRAM
M5M4257P-15 256K-Bit DRAM
M5M4257L-12 256K-Bit DRAM
M5M4257L-15 256K-Bit DRAM
M5M4257L-20 256K-Bit DRAM
M5M4257S-12 256K-Bit DRAM
M5M4257S-15 256K-Bit DRAM
M5M4257S-20 256K-Bit DRAM
M5M4256L-12 256K-Bit DRAM
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